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isc Silicon NPN Power Transistor MJF13007DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 2.0(Max) @ I = 5.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed, power swit-ching in inductive circuit, they are particularly suited for115 and 220V switchmode applications such as switchingregulators,inverters,Motor controls,Solenoid/Relay driversand deflection circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Base Voltage 700 VCBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 9 VEBOI Collector Current-Continuous 8 ACI Collector Current-peak 16 ACMI Base Current 4 ABI Base Current-Peak 8 ABMCollector Power DissipationP

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 mjf13007.pdf Проектирование, MOSFET, Мощность

 mjf13007.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mjf13007.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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