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MMBT2222ATRANSISTOR(NPN)SOT-23 FEATURES Epitaxial planar die construction 1. BASE Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 75 V VCEO 40 VCollector-Emitter Voltage VEBO 6 VEmitter-Base Voltage IC Collector Current -Continuous 600 mA PC Collector Dissipation 250 mW Thermal Resistance, Junction to Ambient 500 /W R JATJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 10A, IE=0 75 VCollector-emitter breakdown voltage V(BR)CEO* IC= 10mA, IB=0 40 VEmitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 6