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DISCRETE SEMICONDUCTORSDATA SHEETk, halfpageM3D088MMBT2222ANPN switching transistorProduct specification 2000 Apr 11Philips Semiconductors Product specificationNPN switching transistor MMBT2222AFEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Switching and linear amplification.DESCRIPTIONhandbook, halfpage3NPN switching transistor in a SOT23 plastic package.3PNP complement: PMBT2907A.1MARKING2TYPE NUMBER MARKING CODE(1)1 2MMBT2222A 7CTop viewMAM255Note1. = p: made in Hong Kong.Fig.1 Simplified outline (SOT23) and symbol. = t: made in Malaysia.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN. MAX. UNITVCBO collector-base voltage open emitter - 75 VVCEO