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MMBT5550 / MMBT5551High Voltage TransistorsNPN SiliconPackage outlineFeatures High collector-emitterbreakdien voltage.SOT-23(BV = 140V~ 160V@I =1mA)CEO C This device is designed for general purpose high voltageamplifiers and gas discharge display driving. Epitaxial planar die construction. Lead-free parts for green partner, exceeds environmentalstandards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex.MMBT5550-H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)Mechanical data 0.108 (2.75)0.083 (2.10) Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, SOT-230.051 (1.30) Terminals : Solder plated, solderable per0.035 (0.89)MIL-STD-750, Method 2026 Mounting Position : Any Weight : Approximated 0.008 gramDimensions in inches and (millimeters)oMaximum ratings (