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MMBT5551MMBT5551AO3400SI2305MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1BASE MARKING: G1 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 180 VVCEO Collector-Emitter Voltage 160 VVEBO Emitter-Base Voltage 6 VIC Collector Current -Continuous 0.6 APC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 VCollector-emitter breakdown voltage V(BR)CEO* IC= 1mA, IB=0 160 VEmitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 VCollector cut-off cu