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Integrated inOVP&OCP productsprovider MMBT5551 TRANSISTOR (NPN)FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1BASE 2EMITTER 3COLLECTOR MARKING: G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 300 mW Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNITCollector-base breakdown voltage V(BR)CBO IC=100A, IE=0 180 V Collector-emitter breakdown V(BR)CEO* IC= 1mA, IB=0 160 V voltage Emitter-base breakdown voltage V(BR)EBO IE= 10A, IC=0 6 V