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MMBTSC1623 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 100 mAPower Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range TS - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. UnitDC Current Gain at VCE = 6 V, IC = 1 mA Current Gain Group O hFE 90 - 180 - Y hFE 135 - 270 - G hFE 200 - 400 - L hFE 300 - 600 - Collector Base Breakdown Voltage V(BR)CBO 60 - - Vat IC = 100 A Collector Emitter Breakdown Voltage V(BR)CEO 50 - - Vat IC = 1 mA