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MMBTSC945 NPN Transistor SOT-23 Features (TO-236) Excellent hFE Linearity Low noise1.Base 2.Emitter 3.CollectorMarking: CRAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 5 V EBOCollector Current I 150 mA CPower Dissipation P 200 mW D Junction Temperature T 150 J Storage Temperature Range T -55 to 150 STGElectrical Characteristics (T =25) AParameter Symbol Min. Max. Unit DC Current Gain 130 200 - at VCE = 6 V, IC = 1 mA Current Gain Group L HFE200 400 - H Collector Base Cutoff Current I - 100 nA CBOat VCB = 60 V Emitter Base Cutoff Current I - 100 nA EBOat VEB = 5 V Collector Base Breakdown Voltage V 60 - V (BR)CBO