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MMBTSC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA733 is recommended. TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 5 VCollector Current IC 150 mAPower Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range TStg - 55 to + 150 C OCharacteristics at Ta = 25 C Parameter Symbol Min. Typ. Max. UnitDC Current Gain at VCE = 6 V, IC = 1 mA Current Gain GroupR hFE 40 - 80 - O hFE 70 - 140 - Y hFE 120 - 240 - P hFE 200 - 400 - L hFE 350 - 700 - Collector Base Cutoff Current ICBO - - 0.1

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