Скачать даташит для mmg150s120b6tn:
MMG150S120B6TN1200V 150A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS T =25C unless otherwise specifiedCSymbol Parameter/Test Conditions Values UnitVCES Collector Emitter Voltage TJ=25 1200VVGES Gate Emitter Voltage 20TC=25 200IC DC Collector CurrentTC=80 150 AICM Repetitive Peak Collector Current tp=1ms 300Ptot Power Dissipation Per IGBT 650 WDiode-inverterABSOLUTE
Ключевые слова - ALL TRANSISTORS DATASHEET
mmg150s120b6tn.pdf Проектирование, MOSFET, Мощность
mmg150s120b6tn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
mmg150s120b6tn.pdf База данных, Инновации, ИМС, Транзисторы



Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet