Справочник транзисторов.

 

Скачать даташит для mmg150s120b6uc:

mmg150s120b6ucmmg150s120b6uc

MMG150S120B6UC1200V 150A IGBT ModuleAugust 2019 Version 01 RoHS CompliantPRODUCT FEATURES IGBT chip in trench FS-technology Low switching losses VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS Welding Machine Power Supplies OthersIGBT-inverterABSOLUTE MAXIMUM RATINGS(T =25C unless otherwise specified)CSymbol Parameter/Test Conditions ValuesUnitVCES TJ=25 1200Collector Emitter VoltageVVGESGate Emitter Voltage 20TC=25,TJmax=175 238ICDC Collector CurrentTC=100,TJmax=175 150 AICMRepetitive Peak Collector Current tp=1ms 300Ptot TC=25,TJmax=175 1000 WPower Dissipation Per IGBTDiode-inverterABSOLUTE MAXIMUM RATINGS (T =25C unless otherwise spe

 

Ключевые слова - ALL TRANSISTORS DATASHEET

 mmg150s120b6uc.pdf Проектирование, MOSFET, Мощность

 mmg150s120b6uc.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmg150s120b6uc.pdf База данных, Инновации, ИМС, Транзисторы

 

 
Back to Top

 


 
.