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MMG200D120B6TC1200V 200A IGBT ModuleJuly 2020 Version 02 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) VCE(sat) with positive temperature coefficient High short circuit capability Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS(T =25C unless otherwise specified)CSymbol Parameter/Test Conditions ValuesUnitVCES TJ=25 1200Collector Emitter VoltageVVGESGate Emitter Voltage 20TC=25, TJmax=175 300ICDC Collector CurrentTC=100, TJmax=175 200 AICMRepetitive Peak Collector Current tp=1ms 400Ptot TC=25, TJmax=175 1071 WPower Dissipation Per IGBTD
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mmg200d120b6tc.pdf Проектирование, MOSFET, Мощность
mmg200d120b6tc.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
mmg200d120b6tc.pdf База данных, Инновации, ИМС, Транзисторы



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