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MMG200D120B6UN 1200V 200A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application GD Series Module Medical applications Motion/servo control UPS systems ABSOLUTE MAXIMUM RATINGS TC=25C unless otherwise specified Symbol Parameter Test Conditions Values UnitIGBT VCES Collector - Emitter Voltage TVj=25C 1200 VVGES Gate - Emitter Voltage 20 V275 ATC=25C IC DC Collector Current TC=65C 200 AICM Repetitive Peak Collector Current tp=1ms 400 APtot Power Dissipation Per IGBT 1385 W Di

 

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 mmg200d120b6un.pdf Проектирование, MOSFET, Мощность

 mmg200d120b6un.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник

 mmg200d120b6un.pdf База данных, Инновации, ИМС, Транзисторы

 

 
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