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MMG75S120B6TN1200V 75A IGBT ModuleApril 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) High short circuit capability,self limiting short circuit current VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching lossesAPPLICATIONS High frequency switching application Medical applications Motion/servo control UPS systemsIGBT-inverterABSOLUTE MAXIMUM RATINGS T =25C unless otherwise specifiedCSymbol Parameter/Test Conditions Values UnitVCES Collector Emitter Voltage TJ=25 1200VVGES Gate Emitter Voltage 20TC=25 105IC DC Collector CurrentTC=80 75 AICM Repetitive Peak Collector Current tp=1ms 150Ptot Power Dissipation Per IGBT 348 WDiode-inverterABSOLUTE MAX
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mmg75s120b6tn.pdf Проектирование, MOSFET, Мощность
mmg75s120b6tn.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
mmg75s120b6tn.pdf База данных, Инновации, ИМС, Транзисторы



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