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MMG75S120B6UN 1200V 75A IGBT Module March 2011 PRELIMINARY RoHS Compliant FEATURES High short circuit capability,self limiting short circuit current IGBT CHIP(1200V NPT technology) VCE(sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses APPLICATIONS High frequency switching application GS Series Module Medical applications Motion/servo control UPS systems ABSOLUTE MAXIMUM RATINGS TC=25C unless otherwise specified Symbol Parameter Test Conditions Values UnitIGBT VCES Collector - Emitter Voltage TVj=25C 1200 VVGES Gate - Emitter Voltage 20 V100 ATC=25C IC DC Collector Current TC=75C 75 AICM Repetitive Peak Collector Current tp=1ms 150 APtot Power Dissipation Per IGBT 568 W Diode
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mmg75s120b6un.pdf Проектирование, MOSFET, Мощность
mmg75s120b6un.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
mmg75s120b6un.pdf База данных, Инновации, ИМС, Транзисторы



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