Скачать даташит для mmix4b22n300:

Advance Technical InformationHigh Voltage, High GainVCES = 3000VMMIX4B22N300BIMOSFETTM MonolithicIC90 = 22ABipolar MOS TransistorC2C1VCE(sat) 2.7VG1G2E2C4 E1C3(Electrically Isolated Tab)G3 G4C2E3E4G2E2C4Symbol Test Conditions Maximum RatingsG4E3E4C1VCES TJ = 25C to 150C 3000 VG1VCGR TJ = 25C to 150C, RGE = 1M 3000 VE1C3VGES Continuous 20 VG3VGEM Transient 30 V Isolated TabE3E4IC25 TC = 25C 38 AG4E2C4IC90 TC = 90C 22 AG2ICM TC = 25C, 1ms 165 AC2G3SSOA VGE = 15V, TVJ = 125C, RG = 15 ICM = 180 AE1C3(RBSOA) Clamped Inductive Load VCES 1500 VG1TSC VGE = 15V, TJ = 125C,C1(SCSOA) RG = 52, VCE = 1500V, Non-Repetitive 10 sG = Gate E = EmitterPC TC = 25C 150 WC = CollectorTJ -55 ... +15