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MSG50N350FHFeatures High Current Capability Low Saturation Voltage:VCE(sat) = 1.30 V @ IC = 50 A High Input Impedance RoHS ComplaintApplications PDP TVAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 330CESVGate to Emitter Voltage V 30GEST =25 100CCollector Current ICT =100 50 ACPulsed Collector Current TC=25 I 180CMDiode forward current @ TC= 100C I 30 AFMaximum Power Dissipation TC=25 328P WDMaximum Power Dissipation TC=100 130Operating Junction Temperature T -55 to 150JStorage Temperature Range T -55 to 150stgMaximum Lead Temp. for solderingT 300LPurposes, 1/8 from case for 5 secondsThermal CharacteristicsParameter Symbol Typ Max UnitThermal Resistance, Junction to Case R (IGBT) 0.38JC/WThermal Resistance, Junction to
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msg50n350fh.pdf Проектирование, MOSFET, Мощность
msg50n350fh.pdf Соответствует RoHS, Сервис, Симисторы, Полупроводник
msg50n350fh.pdf База данных, Инновации, ИМС, Транзисторы



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