Скачать даташит для mtb10n40erev0x:

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB10N40E/DDesigner's Data SheetMTB10N40ETMOS E-FET.Motorola Preferred DeviceHigh Energy Power FETD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 10 AMPERES400 VOLTSThe D2PAK package has the capability of housing a larger dieRDS(on) = 0.55 OHMthan any existing surface mount package which allows it to be usedin applications that require the use of surface mount componentswith higher power and lower RDS(on) capabilities. This high voltageMOSFET uses an advanced termination scheme to provideenhanced voltageblocking capability without degrading perfor-mance over time. In addition, this advanced TMOS EFET isdesigned to withstand high energy in the avalanche and commuta-tion modes. The new energy efficient design also offers aDdrainto