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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP10N40E/DDesigner's Data SheetMTP10N40ETMOS E-FET.High Energy Power FETNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced high voltage TMOS EFET is designed to10 AMPERESwithstand high energy in the avalanche mode and switch efficiently.400 VOLTSThis new high energy device also offers a draintosource diodeRDS(on) = 0.55 OHMSwith fast recovery time. Designed for high voltage, high speedswitching applications such as power supplies, PWM motorcontrols and other inductive loads, the avalanche energy capabilityis specified to eliminate the guesswork in designs where inductiveloads are switched and offer additional safety margin againstunexpected voltage transients. Avalanche Energy Capability Specified at Elevated DTemperature Low Stored G