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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current Continuous IC 600 mAdcTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Device Dissipation @ TC = 25C PD 1.5 WattsDerate above 25C 12 mW/COperating and Storage Junction TJ, Tstg 55 to +150 CTemperature RangeTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitThermal Resistance, Junction to Ambient RqJA 200 C/WThermal Resistance, Junction to Case RqJC 83.3 C/WELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)