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http://www.ncepower.comNCE40P25GNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE40P25G uses uses advanced trench technology toGeneral Featuresprovide excellent R , This device is suitable for use as a load V =-40V,I =-25ADS(ON) DS Dswitch or power management. R =11.5m (typical) @ V =10VDS(ON) GSR =18.5m (typical) @ V =4.5VApplication DS(ON) GS DC/DC Converter High density cell design for ultra low Rdson Ideal for high-frequency switching and synchronous Very low on-resistance RDS(on)rectification Good stability and uniformity with high EAS 150 C operating temperature100% UIS TESTED! Pb-free lead plating100% Vds TESTED!DFN 5X6Top View Bottom View Schematic DiagramPackage Marking and Ordering InformationDevice Marking Device Device Package Reel Size Tape width QuantityNCE40P25G NCE40P25G D