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http://www.ncepower.com NCEPB302G30V Half Bridge Dual N-Channel Super Trench Power MOSFET Description The NCEPB302G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. It includes two specialized MOSFETs in a dual Power DFN5x6 package. Schematic Diagram General Features Q1 "High Side" MOSFET Q2 "Low Side" MOSFET VDS =30V,ID =25A VDS =30V,ID =75A RDS(ON)

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