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NGD8201BIgnition IGBT, 20 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedprotection for use in inductive coil drivers applications. Primary useswww.onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 AMPS, 400 VOLTSFeatures Ideal for Coil-on-Plug ApplicationsVCE(on) 3 1.8 V @ DPAK Package Offers Smaller Footprint for Increased Board SpaceIC = 10 A, VGE . 4.5 V Gate-Emitter ESD ProtectionC Temperature Compensated Gate-Collector Voltage Clamp LimitsStress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) EnergyG RGPer AreaRGE Low Threshold Voltage Interfaces Power Loads to Logic orMicroprocessor Dev