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NGTB15N60S1EGIGBT - Short-Circuit RatedThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Non-Punch Through (NPT) Trench construction, andprovides superior performance in demanding switching applications.Offering both low on state voltage and minimal switching loss, theIGBT is well suited for motor drive control and other hard switchingwww.onsemi.comapplications. Incorporated into the device is a rugged co-packagedreverse recovery diode with a low forward voltage.15 A, 650 VFeaturesVCEsat = 1.5 V Low Saturation Voltage Resulting in Low Conduction Loss Low Switching Loss in Higher Frequency ApplicationsC Soft Fast Reverse Recovery Diode 5 ms Short Circuit Capability Excellent Current versus Package Size Performance Density This is a Pb-Free DeviceGTypical ApplicationsE White Goods Applianc