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NGTB20N120IHRWGIGBT with Monolithic FreeWheeling DiodeThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, provides andsuperior performance in demanding switching applications, and offerslow on-state voltage with minimal switching loss. The IGBT is wellhttp://onsemi.comsuited for resonant or soft switching applications.20 A, 1200 VFeaturesVCEsat = 2.10 V Extremely Efficient Trench with Fieldstop Technology Low Switching Loss Reduces System Power DissipationEoff = 0.45 mJ Optimized for Low Losses in IH Cooker ApplicationC Reliable and Cost Effective Single Die Solution These are Pb-Free DevicesTypical Applications Inductive Heating G Consumer Appliances Soft Switching EABSOLUTE MAXIMUM RATINGSRating Symbol Value UnitCollector-emitter voltage @ TJ =