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NGTG15N120FL2WGIGBT - Field Stop IIThis Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss. The IGBT is well suitedfor UPS and solar applications.http://onsemi.comFeatures Extremely Efficient Trench with Field Stop Technology15 A, 1200 V TJmax = 175CVCEsat = 2.0 V Optimized for High Speed SwitchingEoff = 0.37 mJ 10 ms Short Circuit Capability These are Pb-Free DevicesCTypical Applications Solar Inverter Uninterruptible Power Inverter Supplies (UPS)G WeldingABSOLUTE MAXIMUM RATINGSERating Symbol Value UnitCollector-emitter voltage VCES 1200 VCollector current IC A@ TC = 25C 30@ TC = 100C 15Pulsed collector cu