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NTMFS6H801NPower MOSFET80 V, 2.8 mW, 157 A, Single N-ChannelFeatures Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losseswww.onsemi.com Low QG and Capacitance to Minimize Driver Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise noted)80 V 2.8 mW @ 10 V 157 AParameter Symbol Value UnitDrain-to-Source Voltage VDSS 80 VGate-to-Source Voltage VGS 20 VD (5)Continuous Drain TC = 25C ID 157 ACurrent RqJC TC = 100C 111(Notes 1, 3)SteadyStatePower Dissipation TC = 25C PD 166 WRqJC (Note 1)TC = 100C 83G (4)Continuous Drain TA = 25C ID 23 ACurrent RqJA TA = 100C 16 S (1,2,3)(Notes 1, 2, 3)SteadyStateN-CHANNEL MOSFETPower Dissipation TA = 25C PD 3.8 WRqJA (Notes 1 & 2)TA = 100C 1.9Pulsed