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MOSFET - Power, SingleN-Channel80 V, 50 mW, 14 ANVTFS6H888NLFeatureswww.onsemi.com Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver LossesV(BR)DSS RDS(ON) MAX ID MAX NVTFS6H888NLWF - Wettable Flanks Product AEC-Q101 Qualified and PPAP Capable 50 mW @ 10 V80 V14 A These Devices are Pb-Free and are RoHS Compliant67 mW @ 4.5 VMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value Unit N-ChannelDrain-to-Source Voltage VDSS 80 V D (5 - 8)Gate-to-Source Voltage VGS 20 VContinuous Drain TC = 25C ID 14 ACurrent RqJC TC = 100C 10 G (4)(Notes 1, 2, 3, 4)SteadyStatePower Dissipation TC = 25C PD 23 WRqJC (Notes 1, 2, 3)S (1, 2, 3)TC = 100C 12Continuous Drain TA = 25C ID 4.9 AMARKINGCurrent RqJA TA = 100C