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P1504HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID23m @VGS = 10V40V 7A100% UIS testedSOP-8 100% Rg testedABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 25TA = 25 C7IDContinuous Drain CurrentTA= 100 C4AIDM30Pulsed Drain Current1IASAvalanche Current 28EASAvalanche Energy L = 0.1 mH 41 mJTA = 25 C2PDPower Dissipation WTA= 100C0.8Tj, TstgOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Lead RqJL 25C / WJunction-to-Ambient RqJA 62.51Pulse width limited by maximum junction temperature.REV 1.0 1 2014/9/19P1504HVDual N-Channel Enhancement Mode