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P1603BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID14m @VGS = 10V30V 40ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C40IDContinuous Drain CurrentTC= 100 C32AIDM150Pulsed Drain Current1IASAvalanche Current 23EASAvalanche Energy L=0.1mH 26 mJTC= 25 C42PDPower Dissipation WTC= 100C27Tj, TstgJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 3C / WJunction-to-Ambient RqJA 62.51Pulse width limited by maximum junction temperature.REV 1.0 1 2014/5/8P1603BDN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25 C, Unl