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P1603BEBBN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON)ID316m @VGS = 10V30V 24APDFN 2X2SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C24TC = 100 C15IDContinuous Drain Current3TA = 25 C8.2ATA= 70 C6.6IDM70Pulsed Drain Current1IASAvalanche Current 20.5EASAvalanche Energy L = 0.1 mH 21 mJTC = 25 C15TC = 100 C6.2PDPower Dissipation WTA= 25 C1.8TA= 70C1.1Tj, TstgOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSRqJA 67Junction-to-Ambient2C / WJunction-to-Case RqJC 81Pulse width limited by maximum junction temperature.2The