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P1603BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 16m @VGS = 10V 10ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C10IDContinuous Drain CurrentTA = 70 C8AIDM55Pulsed Drain Current1IASAvalanche Current 23EASAvalanche Energy L = 0.1mH 26 mJTA = 25 C2.6PDPower Dissipation WTA = 70 C1.6TJ, TSTGOperating Junction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Case RqJC 25C / WJunction-to-Ambient RqJA 501Pulse width limited by maximum junction temperature.Ver 1.0 1 2012/4/13P1603BVN-Channel Enhancement Mode MOSFETELECTRICAL CHARACTERISTICS (TJ = 25 C, Unless Otherwise No