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P1603BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID16m @VGS = 10V30V 9.4ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C9.4IDContinuous Drain CurrentTA = 70 C7.5AIDM50Pulsed Drain Current1IASAvalanche Current 15EASAvalanche Energy L =0.1mH 11.2 mJTA= 25 C2.2PDPower Dissipation WTA =70 C1.4Tj, TstgJunction & Storage Temperature Range -55 to 150 CTHERMAL RESISTANCE RATINGSTHERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITSJunction-to-Ambient RqJA 55C / WJunction-to-Case RqJC 181Pulse width limited by maximum junction temperature.2The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a stil