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P2N2222AAmplifier TransistorsNPN SiliconFeatures These are Pb--Free Devices*http://onsemi.comCOLLECTOR1MAXIMUM RATINGS (TA =25C unless otherwise noted)Characteristic Symbol Value Unit2BASECollector--Emitter Voltage VCEO 40 VdcCollector--Base Voltage VCBO 75 Vdc3Emitter--Base Voltage VEBO 6.0 VdcEMITTERCollector Current -- Continuous IC 600 mAdcTotal Device Dissipation @ TA =25C PD 625 mWDerate above 25C 5.0 mW/CTO--92Total Device Dissipation @ TC =25C PD 1.5 WCASE 29Derate above 25C 12 mW/CSTYLE 17Operating and Storage Junction TJ, Tstg --55 to CTemperature Range +15011223THERMAL CHARACTERISTICS 3STRAIGHT LEAD BENT LEADCharacteristic Symbol Max UnitBULK PACK TAPE & REELAMMO PACKThermal Resistance, Junction to Ambient RJA 200 C/WThermal Resistance, Junction to Case RJC 83.3 C/WMARKI

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 p2n2222a-d.pdf Проектирование, MOSFET, Мощность

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