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DISCRETE SEMICONDUCTORSDATA SHEETPHE13007Silicon Diffused Power TransistorProduct specification February 2018WeEn Semiconductors Product specification Silicon Diffused Power Transistor PHE13007 GENERAL DESCRIPTIONThe PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in highfrequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,etc.QUICK REFERENCE DATASYMBOL PARAMETER CONDITIONS TYP. MAX. UNITVCESM Collector-emitter voltage peak value VBE = 0 V - 700 VVCBO Collector-Base voltage (open emitter) - 700 VVCEO Collector-emitter voltage (open base) - 400 VVEBO Emitter-Base voltage (IB = 0) - 9 VIC Collector current (DC) - 8 AICM Collector current peak value - 16 APtot Total power dissipation Tmb 25 C - 80 WVCEsat Collector-emitter saturati