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Philips Semiconductors Product specification PowerMOS transistor PHP10N40 GENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITfield-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 400 Vavalanche energy capability, stable ID Drain current (DC) 10.7 Ablocking voltage, fast switching and Ptot Total power dissipation 147 Whigh thermal cycling performance RDS(ON) Drain-source on-state resistance 0.55 with low thermal resistance. Intendedfor use in Switched Mode PowerSupplies (SMPS), motor controlcircuits and general purposeswitching applications.PINNING - TO220AB PIN CONFIGURATION SYMBOLPIN DESCRIPTION dtab1 gate2 draing3 sourcetab drain1 2 3sLIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONS MIN