Скачать даташит для r07ds0132ej_rjk4518dpk:

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200(Previous: REJ03G1529-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Sep 08, 2010Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Gate2. Drain (Flange)G3. Source12S3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 450 VGate to source voltage VGSS 30 VDrain current ID 39 ADrain peak current ID (pulse)Note1 117 ABody-drain diode reverse drain current IDR 39 ABody-drain diode reverse drain peak current IDR (pulse)Note1 117 AAvalanche current IAPNote3 10 AAvalanche energy EARNote3 5.6 mJChannel dissipation Pch Note2 200 WChannel to case thermal