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Preliminary Datasheet RJK5013DPE R07DS0487EJ0300(Previous: REJ03G1488-0200)Silicon N Channel MOS FET Rev.3.00Jun 29, 2011High Speed Power Switching Features Low on-resistance RDS(on) = 0. 385 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4. Drain123SAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitDrain to source voltage VDSS 500 VGate to source voltage VGSS 30 VDrain current ID 14 ADrain peak current ID (pulse)Note1 42 ABody-drain diode reverse drain current IDR 14 ABody-drain diode reverse drain peak current IDR (pulse)Note1 42 AAvalanche current IAPNote3 4 AAvalanche energy EARNote3 0.88 mJChannel dissipation Pch Note2 100 WChannel to ca