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Preliminary DatasheetRJH1CV6DPQ-E0 R07DS0524EJ03001200 V - 30 A - IGBT Rev.3.00Application: Inverter Nov 21, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25C) Built in fast recovery diode (trr = 100 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 30 A, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A(Package name: TO-247)C41. Gate2. CollectorG3. Emitter4. Collector12E3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 1200 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 60 ATc