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Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK (S)-(1) )C41. Gate2. CollectorG3. Emitter124. Collector3EAbsolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25 C IC Note1 50 ATc = 100C IC Note1 25 ACollector peak current ic(peak) Note1 100 ACollector dissipation PC 122 WJunction to case thermal impedan