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Preliminary Datasheet RJH1CV5DPQ-E0 R07DS0523EJ05001200V - 25A - IGBT Rev.5.00Application: Inverter Jun 12, 2012Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Built-in fast recovery diode (trr = 170 ns typ.) in one package Trench gate and thin wafer technology High speed switching tf = 165 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 25 A, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0003ZE-A(Package name: TO-247)C41. Gate2. CollectorG3. Emitter4. Collector12E3Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage / diode reverse voltage VCES / VR 1200 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 50 ATc