Скачать даташит для rjh60f5dpk:

Preliminary www.DataSheet4U.comRJH60F5DPK Silicon N Channel IGBT REJ03G1836-0100 Rev.1.00 High Speed Power Switching Oct 13, 2009Features High speed switching Low on-state voltage Fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25 C IC 80 ATc = 100 C IC 40 ACollector peak current ic(peak) Note1 160 ACollector to emitter diode forward peak current iDF(peak) Note2 100 ACollector dissipation PC 260.4 WJunction to case thermal impedance (IGBT) j-c 0.48 C/WJunction to case thermal impedance (Diode) j-c 2.0 C/WJunction temperature Tj 150 C S