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Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A R07DS0467EJ0200Silicon N Channel IGBT Rev.2.00High speed power switching Jun 15, 2011Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A maxOutline RENESAS Package code: PRSS0004ZH-A(Package name: TO-3PSG)C41. Gate2. CollectorG3. Emitter4. Collector (Flange)123EAbsolute Maximum Ratings www.DataSheet.co.kr(Ta = 25C) Item Symbol Ratings UnitCollector to Emitter voltage VCES 360 VGate to Emitter voltage VGES 30 VCollector current Ic 35 A Collector peak current ic(peak) Note1 250 ACollector dissipation PC Note2 60 WJunction to case thermal impedance j-c 2.08 C/ WJunction temperature Tj 150