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Preliminary Datasheet RJP6065DPM R07DS0204EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Nov 19, 2010Features Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (IC = 40 A, VGE = 15V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C1. Gate2. CollectorG3. EmitterE123Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 630 VGate to emitter voltage VGES 30 VCollector current Ic Note1 40 ACollector peak current ic(peak) Note1 100 ACollector dissipation PC 50 WJunction to case thermal impedance j-c 2.5 C/WJunction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse width limited by safe operat