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Preliminary Datasheet RJP60D0DPP-M0 R07DS0173EJ0100Silicon N Channel IGBT Rev.1.00High Speed Power Switching Mar 11, 2011Features Short circuit withstand time (5 s typ.) Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (IC = 22 A, VGE = 15 V, Ta = 25C) Gate to emitter voltage rating 30 V Pb-free lead plating and chip bonding Outline RENESAS Package code: PRSS0003AF-A)(Package name: TO-220FL)C1. Gate2. Collector G3. Emitter123EAbsolute Maximum Ratings (Ta = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25C IC 45 ATc = 100C IC 22 ACollector peak current ic(peak) Note1 90 ACollector dissipation PC Note2 35 WJunction to case thermal impedance j-c Note2 3.57 C/ WJunction temperature Tj 150