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Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C1. GateG 2. Collector3. EmitterE123Absolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25 C IC Note1 60 ATc = 100 C IC Note1 30 ACollector peak current ic(peak) Note1 120 ACollector dissipation PC 41.2 WJunction to case thermal impedance j-c 3.03 C/WJunction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Notes: 1. Pulse wid