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Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A(Package name: TO-3P)C41. Gate2. CollectorG3. Emitter4. Collector123EAbsolute Maximum Ratings (Tc = 25C) Item Symbol Ratings UnitCollector to emitter voltage VCES 600 VGate to emitter voltage VGES 30 VCollector current Tc = 25 C IC 80 ATc = 100 C IC 40 ACollector peak current ic(peak) Note1 160 ACollector dissipation PC 260.4 WJunction to case thermal impedance j-c 0.48 C/WJunction temperature Tj 150 C Storage t