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Jingdao Microelectronics co.LTDS9013General Purpose TransistorNPN SiliconFEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity.SOT-23 3COLLECTOOR31DEVICE MARKINGBASES9013 = J312EMITTER2MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 25 VdcCollectorBase Voltage VCBO 40 VdcEmitterBase Voltage VEBO 5.0 VdcCollector Current Continuous IC 500 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR 5 Board, (1)300 mWPDTA = 25CJunction and Storage TemperatureC TJ,Tstg 55 to +150ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)OFF CHARACTERISTICSCharacteristic Symbol Min Max UnitCollectorEmitter Breakdown Voltage(3)V(BR)CEO 25 Vdc(IC =

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