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S9013Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to S9012 High Stability and High Reliability MARKINGJ3 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter -Base Voltage VEBO 5 V Collector Current-Continuous IC 500 mA Collector Power Dissipation PC 300 mW Junction Temperature Tj 150 Storage Temperature Tstg -55-+150 Thermal resistance From junction to ambient RJA 416 /W Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified). Limits Parameter Symbols Test Condition Unit Min Max V(BR)CBO IC=100uA, IE=0 Collector-base breakdown voltage 40 V V(BR)CEO IC=1