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isc Silicon NPN Power Transistor S9013DESCRIPTIONExcellent hFE linearityComplement to PNP Type S9012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collector-Emitter Voltage 25 VCEOV Emitter-Base Voltage 5 VEBOI Collector Current-Continuous 500 mACCollector Power DissipationP 625 mWC@ T =25CT Junction Temperature 150 JT Storage Temperature Range -55~150 stg1isc websitewww.iscsemi.com isc & iscsemi is registered trademarkisc Silicon NPN Power Transistor S9013ELECTRICAL CHARACTERISTICST =25 unless otherwise specifiedCUNISYMBOL PARAMETER CONDITIONS MIN TYP. MAXTV Collector-base breakdown voltage I = 100A , I =0 40 V(BR)CB